Publikationen
2024
Abstract
n-type doping of GaN via pulsed sputter epitaxy
Hörich, Florian; Bläsing, Jürgen; Grümbel, Jona; Feneberg, Martin; Goldhahn, Rüdiger; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.4 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Highly spatially resolved investigation of structural and optical properties of a GaN-based p-n-diode
Greczmiel, Luca; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Eisele, Holger; Dempewolf, Anja; Petzold, Silke; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 44.7 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
HfN as conductive buffer for GaN epitaxy
Lüttich, Christopher; Hörich, Florian; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 44.11 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Impact of overgrowth conditions on characteristics of tunnel-junction LEDs
Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 52.3 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Local GaAs growth on patterned Si(001) surfaces by Laser-assisted MOVPE
Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel O 17.2 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Multiphonon Raman scattering in rocksalt ScN
Wolf, Stefan; Grümbel, Jona; Oshima, Yuichi; Lüttich, Christopher; Hörich, Florian; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.9 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Phases of sputtered HfxNy: XRD, Ellipsometry and Raman spectroscopy studies
Grümbel, Jona; Lüttich, Christopher; Bläsing, Jürgen; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.11 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Begutachteter Zeitschriftenartikel
GaN quantum dots in resonant cavity nanopillars as deep-UV single-photon sources
Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Veit, Peter; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Kullig, Julius; Wiersig, Jan; Gao, Kang; Holmes, Mark; Arakawa, Yasuhiko; Christen, Jürgen
In: Physica status solidi. Rapid research letters - Weinheim : Wiley-VCH . - 2024, insges. 8 S. [Online first]
Blue shift of the absorption onset and bandgap bowing in rutile GexSn1−xO2
Kluth, Elias; Nagashima, Yo; Osawa, Shohei; Hirose, Yasushi; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin
In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 125 (2024), Heft 12, Artikel 122102, insges. 6 S.
2023
Abstract
Local epitaxial growth by laser-assisted MOVPE
Strittmatter, André; Bruckmann, Christian; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin
In: FAME – First International Workshop on Fundamentals and Advances of MOVPE processes - IPIC Research Centre . - 2023
Optical an structural characterization of an 'AlInN/GaN-based longitudinal photonic bandgap crystal laser structure
Schmidt, Gordon; Berger, Christoph; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-4
GaN quantum dots in resonant cavity micropillars as deep UV single photon sources
Christen, Jürgen; Schuermann, Hannes; Bertram, Frank; Schmidt, Gordon; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Gao, Kong; Holmes, Marc; Arakawa, Yasuhiko
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-2
Optical Nano-Charakterization of a Cascaded InGaN/GaN LED
Bertram, Frank; Schmidt, Gordon; Veit, Peter; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH3-2
Local heteroepitaxial growth of GaAs islands on Si by laser-assisted metal organic vapor phase epitaxy
Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André
In: DGKK/DEMBE 2023 - Stuttgart : Universität, S. 31
Growth of ScN and AlScN by reactive sputter epitaxy
Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.7
Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 44.1
High resistive buffer layers by Fermi-level engineering
Dadgar, Armin; Borgmann, Ralf; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.1
Progress in local growth of III/V-semiconductor structures
Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel O.32.1
Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 7.6
Local epitaxial growth of GaAs islands for monolithic integration on Si
Bruckmann, Christian; Trippel, Max; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Abstract booklet of ISTDM-ICSI 2023 - Como, insges. 1 S.
Group-III/V Quantum dots - controlling their properties and position through epitaxial growth
Strittmatter, André
In: Konferenz: iNOW2023, Würzburg, 16-27 July 2023, Abstract booklet of iNOW2023 - Würzburg : Universität
Selective GaAs-based p/n-diode fabricated by laser-assisted metal organic vapor phase epitaxy
Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André
In: CSW 2023 - Jeju, Korea, S. 693, Artikel P2-010
Advanced cathodoluminescence microscopy of a cascaded InGaN/GaN LED
Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wein, Konstantin; Christen, Jürgen; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 57, Artikel M07
(Late news) characterization of the space-charge region of a GaN pn-junction and pin-drift-diode using EBIC and CL
Eisele, Holger; Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Dadgar, Armin; Berger, Christoph; Strittmatter, André; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Faber, Samuel; Witzigmann, Bernd
In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 116-117, Artikel W04
Improving the insulating properties of C-doped GaN buffer layers
Dadgar, Armin; Zweipfenning, Thorsten; Ehrler, Jasmin; Borgmann, Ralf; Bläsing, Jürgen; Kalisch, Holger; Vescan, Andrei; Strittmatter, André
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel TuP-ED-23
Optical properties of rocksalt ScN
Feneberg, Martin; Grümbel, Jona; Lüttich, Christopher; Dadgar, Armin; Oshima, Yuichi; Dubroka, Adam; Ramsteiner, Manfred; Goldhahn, Rüdiger
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH2-2
Optical properties of ScN films grown by HVPE and sputter epitaxy
Grümbel, Jona; Oshima, Yuichi; Lüttich, Christopher; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.9
Begutachteter Zeitschriftenartikel
Sputter epitaxy of AlN and GaN on Si(111)
Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: Physica status solidi / A - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 8, Artikel 2200609, insges. 6 S.
High resistive buffer layers by Fermi level engineering
Dadgar, Armin; Borgmann, Ralf; Bläsing, Jörg; Strittmatter, André
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 025701, insges. 9 S.
Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si
Mihalic, S.; Wade, E.; Lüttich, Christopher; Hörich, Florian; Sun, C.; Fu, Z.; Christian, B.; Dadgar, Armin; Strittmatter, André; Anbacher, O.
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 155107, insges. 12 S.
Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1−x)2O3 alloys
Kluth, Elias; Anhar Uddin Bhuiyan, A. F. M.; Meng, Lingyu; Bläsing, Jürgen; Zhao, Hongping; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin
In: Japanese journal of applied physics - Bristol : IOP Publ., Bd. 62 (2023), Heft 5, Artikel 051001, insges. 8 S.
Dissertation
Sputterepitaxie von Gruppe III-Nitriden
Hörich, Florian; Strittmatter, André
In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2023, 1 Online-Ressource (101 Seiten, 3,67 MB) [Literaturverzeichnis: insg. 17 Seiten][Literaturverzeichnis: insg. 17 Seiten]
2022
Abstract
Optical properties of the AlScN ternary system
Grümbel, Jona; Baron, Elias; Lüttich, Christopher; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Dadgar, Armin; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 263, Artikel AT 195
Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering
Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 28, Artikel AT 018
Laser-assisted local eptiaxy of ///-V compound semiconductors
Trippel, Max; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022
Heavily Ge-doped GaN films - properties and applications
Berger, Christoph; Neugebauer, S.; Dadgar, Armin; Schürmann, H.; Bläsing, Jürgen; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112
GaN quantum dots in vertical resonant cavity structure
Schürmann, Hannes; Berger, Christoph; Kang, Gao; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Holmes, Mark; Christen, Jürgen
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720
Alternately Si and C doped GaN layers for enhanced buffer breakdown
Dadgar, Armin; Borgmann, Ralf; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 576
Structural and elastic properties of ScxAl1 xN
Mihalic, Saskia; Dadgar, Armin; Feil, Niclas M.; Lüttich, Christopher; Strittmatter, André; Ambacher, Oliver
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Analysis of vertical indium distribution in lattice-matched AlInN layers
Xin, Tianjiao; Berger, Christoph; Bläsing, Jürgen; Strittmatter, André
In: Konferenz: 20th International Conference on Metalorganic Vapor Phase Epitaxy, ICMOVPE XX, Fellbach, July 10 - 14, 2022, The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart . - 2022, S. 34, Artikel MoA2.5
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Strittmatter, André
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 731, Artikel PP 363
Growth of epitaxial GaN by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 609, Artikel PP 266
Sputtering eptiaxy of transition metal nitrides and AlScN
Lüttich, Christoph; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Dempewolf, Anja; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 599, Artikel PP 256
Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties
Wein, Konstantin; Schmidt, Gordon; Bertram, Frank; Petzold, Silke; Veit, Peter; Berger, Christoph; Strittmatter, André; Christen, Jürgen
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Growth of epitaxial GaN by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Buchbeitrag
Sputter epitaxy of AlN and GaN on Si for device applications
Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Lüttich, Christopher; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022
Begutachteter Zeitschriftenartikel
Laser-assisted local metalorganic vapor phase epitaxy
Trippel, Max; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.
Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
Berger, Christoph; Neugebauer, S.; Hörich, Florian; Dadgar, Armin; Strittmatter, André
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 132 (2022), Artikel 233103, insges. 9 S.
Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors
Challa, S. R.; Witte, Hartmut; Schmidt, Gordon; Bläsing, Jürgen; Vega, N.; Kristukat, C.; Müller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, André
In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 11, Artikel 115107, insges. 7 S.
Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties
Schürmann, Hannes; Schmidt, Gordon; Bertram, Frank; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 14, Artikel 145102, insges. 7 S.
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.
Dissertation
Fabrication of electrically pumped vertical cavity surface emitters employing GaN:Mg/GaN:Ge tunnel junction contacts
Seneza, Cleophace; Strittmatter, André
In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2022, 1 Online-Ressource (xv, 93 Seiten, 3,74 MB) [Literaturverzeichnis: Seite 83-87]
Artikel in Kongressband
MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022
2021
Begutachteter Zeitschriftenartikel
Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer
Challa, Seshagiri Rao; Vega, Nahuel A.; Mueller, Nahuel A.; Kristukat, Christian; Debray, Mario E.; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: IEEE transactions on electron devices/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 68 (2021), 1, S. 24-28
Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.
Low-resistivity vertical current transport across AlInN/GaN interfaces
Sana, Prabha; Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Schmidt, Marc-Peter; Bläsing, Jürgen; Neugebauer, Silvio; Hörich, Florian; Dadgar, Armin; Strittmatter, André
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 60 (2021), 14, insges. 12 S.
Raman tensor determination of transparent uniaxial crystals and their thin films$xda-plane GaN as exemplary case
Hildebrandt, R.; Sturm, C.; Wieneke, Matthias; Dadgar, Armin; Grundmann, M.
In: Applied physics letters - Melville, NY: American Inst. of Physics, Bd. 119 (2021), insges. 6 S.
Buchbeitrag
Novel concepts for III-N-based vertical cavity surface emitting lasers
Dadgar, Armin
In: IEEE Xplore digital library/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE . - 2021, insges. 1 S.
2020
Abstract
Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks
Witte, Hartmut; Seneza, Cleophace; Sana, Prabha; Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
Size-effect of donors on the lattice parameters of wurtzite GaN
Kluth, Elias; Lange, Karsten; Wienecke, Matthias; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger; Feneberg, Martin
In: DPG-Frühjahrstagung - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.3
Buchbeitrag
Nitride microcavities and single quantum dots for classical and non-classical light emitters
Schmidt, Gordon; Berger, Christoph; Dadgar, Armin; Bertram, Frank; Veit, P.; Metzner, Susanne; Strittmatter, André; Christen, Jürgen; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)
Stressor-induced site control of quantum dots for single-photon sources
Pohl, Udo W.; Strittmatter, André; Schliwa, A.; Lehmann, M.; Niermann, T.; Heindel, T.; Reitzenstein, S.; Kantner, M.; Bandelow, U.; Koprucki, T.; Wünsche, H.-J.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)
Submonolayer quantum dots
Owschimikow, Nina; Herzog, Bastian; Lingnau, Benjamin; Lüdge, Kathi; Lenz, Andrea; Eisele, Holger; Dähne, Mario; Niermann, Tore; Lehmann, Mario; Schliwa, Andrei; Strittmatter, André; Pohl, Udo W.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)
Begutachteter Zeitschriftenartikel
Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 m
Podemski, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Maryński, Aleksander; Gontar, Przemysław; Bercha, Artem; Trzeciakowski, Witold A.; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz
In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten
Individually resolved luminescence from closely stacked GaN/AlN quantum wells
Sheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Bläsing, Jürgen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, André; Shen, Bo; Christen, Jürgen; Wang, Xinqiang
In: Photonics research - Washington, DC : OSA, Bd. 8 (2020), Heft 4, S. 610-615
Experimental re-evaluation of proton penetration ranges in GaAs and InGaP
Yaccuzzi, Exequiel; Di Napoli, Solange; Liscia, Emiliano; Suárez, Sergio; Alurralde, Martín; Strittmatter, André; Plá, Juan; Giudici, Paula
In: Journal of physics / D - Bristol: IOP Publ. . - 2020[Online first]
Tools for the performance optimization of single-photon quantum key distribution
Kupko, Timm; Helversen, Martin; Rickert, Lucas; Schulze, Jan-Hindrik; Strittmatter, André; Gschrey, Manuel; Rodt, Sven; Reitzenstein, Stephan; Heindel, Tobias
In: npj Quantum information - London: Nature Publ. Group, Vol. 6(2020), article number 29, 8 Seiten
Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies
Hajo, Ahid S.; Yilmazoglu, Oktay; Dadgar, Armin; Küppers, Franko; Kusserow, Thomas
In: IEEE access: practical research, open solutions/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 8.2020, S. 84116-84122
The impurity size-effect and phonon deformation potentials in wurtzite GaN
Kluth, Elias; Wieneke, Matthias; Bläsing, Jürgen P.; Witte, Hartmut; Lange, Karsten; Dadgar, Armin; Goldhahn, Rüdiger; Feneberg, Martin
In: Semiconductor science and technology - Bristol: IOP Publ., Volume 35 (2020), issue 9, 9 Seiten
2019
Abstract
Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions
Witte, Hartmut; Fariza, Aqdas; Neugebauer, Silvio; Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR
Schürmann, Hannes; Berger, Christoph; Kang, G.; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Metzner, Sebastian; Bläsing, Jürgen; Strittmatter, André; Holmes, M.; Christen, Jürgen
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, M.P.; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation
Challa, Seshagiri Rao; Vega, N.; Kristukat, N.A.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online
GaN:Mg/GaN:Ge tunnel junctions for better light emitters
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online
On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation
Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: ICNS-13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online
Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, Marc-Peter; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK - Dresden . - 2019
Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Christen, Jürgen; Strittmatter, André
In: Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019, 13th International Conference on Nitride Semiconductors - Washington . - 2019
Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations
Schmidt, Gordon; Veit, Peter; Metzner, Sebastian; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XVIII, Berlin, September, 8-12, 2019, Microscopy and microanalysis - New York, NY : Cambridge University Press, Bd. 22 (2019), S. 602-603
Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)
Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.; Debray, M.; Schmidt, Gordon; Christen, Jürgen; Hörich, Florian; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Growth of desorption-induced GaN quantum-dots
Berger, Christoph; Schmidt, Gordon; Schürmann, Hannes; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André; Kalinoswki, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
1D photonic bandgap structures for high-power GaN/InGaN laser divices
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Deckert, M.; Witte, Hartmut; Christen, Jürgen; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack
Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Bläsing, Jürgen; Miyake, H.; Li, H.; Qin, Z.; Strittmatter, André; Christen, Jürgen; Shen, B.; Wang, X.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Small-area current injection in GaN-based light emitters with tunnel junctions
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, Andrée-Woo
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Reactive pulsed sputtering of AIN and GaN
Hörich, Florian; Kahrmann, C.; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef : DPG - 2019, Art. Hl 24.9
Buchbeitrag
Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots
Schmidt, Marco; Helversen, Martin; Schlottmann, Elisabeth; López, Marco; Gericke, Fabian; Schulze, Jan-Hindrik; Strittmatter, André; Schneider, Christian; Kück, Stefan; Höfling, Sven; Heindel, Tobias; Beyer, Jörn; Reitzenstein, Stephan
In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Volume 10933 (2019) [Konferenz: Advances in Photonics of Quantum Computing, Memory, and Communication XII, San Francisco, California, United States, 2 - 7 February 2019]
Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)
Schuermann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, Stefan; Callsen, Gordon; Jagsch, Stefan; Wagner, Markus; Hoffmann, Axel
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)
A new approach to achieve Gunn effect for GaN based THz sources with high power
Hajo, Ahid S.; Yilmazoglu, Oktay; Samodi, Boraq; Dadgar, Armin; Kuppers, Franko; Kussorow, Thomas
In: IRMMW-THz 2019 - [Piscataway, NJ]: IEEE, S. 1-2[Konferenz: 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Paris, 1. - 6. September 2019]
GaN-On-Si epitaxy
Dadgar, Armin
In: Encyclopedia of applied physics - New York, NY [u.a.]: Wiley, S. 1-13, 2019
Nitride semiconductors
Dadgar, Armin; Weyers, M.
In: Metalorganic Vapor Phase Epitaxy (MOVPE) - Newark: John Wiley & Sons, Incorporated; Irvine, Stuart, S. 109-147, 2019
Begutachteter Zeitschriftenartikel
Static and dynamic characteristics of In(AsSb)/ GaAs submonolayer lasers
Quandt, David; Arsenijevic, Dejan; Strittmatter, André; Bimberg, Dieter H.
In: IEEE journal of quantum electronics - New York, NY: IEEE, Bd. 55.2019, 3, S. 1-7
Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs
Vega, Nahuel A.; Dadgar, Armin; Strittmatter, André; Challa, Seshagiri Rao; Ferreyra, Romualdo A.; Kristukat, Christian; Muller, Nahuel A.; Debray, Mario E.; Schmidt, Gordon; Witte, Hartmut; Christen, Jürgen
In: IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66.2019, 12, S. 2417-2421
Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Mrowiński, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Dusanowski, Łukasz; Heuser, Tobias; Srocka, Nicole; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz
In: Physical review - Woodbury, NY: Inst., Volume 100, issue 11 (2019), article 115310
Quantum metrology of solid-state single-photon sources using photon-number-resolving detectors
Helversen, Martin; Böhm, Jonas; Schmidt, Marco; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Beyer, Jörn; Heindel, Tobias; Reitzenstein, Stephan
In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Volume 21, issue 3 (2019), article 035007, insgesamt 8 Seiten
Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film
Sheng, Bowen; Bertram, Frank; Zheng, Xiantong; Wang, Ping; Schmidt, Gordon; Veit, Peter; Bläsing, Jürgen; Chen, Zhaoying; Strittmatter, André; Christen, Jürgen; Shen, Bo; Wang, Xinqiang
In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten
Broadband semiconductor light Sources operating at 1060 nm based on InAs - Sb/GaAs submonolayer quantum dots
Herzog, Bastian; Lingnau, Benjamin; Kolarczik, Mirco; Helmrich, Sophia; Achtstein, Alexander; Thommes, Kevin; Alhussein, Fuad; Quandt, David; Strittmatter, André; Pohl, Udo
In: IEEE journal of selected topics in quantum electronics - New York, NY: IEEE, Volume 25, issue 6 (2019), article 1900310
Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, Armin; Erlbacher, T.
In: Journal of applied physics - Melville, NY: American Inst. of Physics, Volume 125, issue 9 (2019), article 095704
Dissertation
Surface and electrical properties of GaN layers - impact on GaN/AllnN FETs
Fariza, Aqdas; Dadgar, Armin
In: Magdeburg, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2019, xvi, 127 Seiten [Literaturverzeichnis: Seite 119-127][Literaturverzeichnis: Seite 119-127]
2018
Abstract
Laser-assisted local metalorganic vapor phase epitaxy
Trippel, Max; Wieneke, Matthias; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]
Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Poliani, E.; Wagner, M. R.; Maultzsch, J.; Dadgar, Armin; Strittmatter, André; Hoffmann, A.; Christen, Jürgen
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures
Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]
Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, H.; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Hoffmann, A.
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy
Berger, Christoph; Neugebauer, Silvio; Seneza, C.; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S.; Hoffmann, A.
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]
Desorption induced formation of deep UV-emitting nanostructures
Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Kalinowski, S.; Callsen, G.; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.; Christen, Jürgen
In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]
Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation
Bertram, Frank; Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018[Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]
Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Dadgar, Armin; Bläsing, Jürgen; Metzner, Sebastian; Deckert, Martin; Witte, Hartmut; Strittmatter, André
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn
Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)
Challa, Seshagiri Rao; Vega, N.; Kristukat, Ch.; Debrey, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Kerstin; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2[Workshop: 9th Wide Band Gap Semiconductor and Components Workshop, Harwell, UK, 8 - 9 October 2018]
Tunnel junction design for InGaN/GaN-based light emitters
Strittmatter, André
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018[Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]
Characteristics of InAsSb/GaAs submonolayer lasers
Quandt, David; Arsenijevic, Dejan; Bimberg, Dieter; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]
Amphoteric incorporation of carbon in GaN
Hoffmann, Axel; Jankowski, Nadja; Poliani, Emmanuele; Scheel, Harald; Wagner, Markus R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Zwieryz, R.; Kachel, K.; Bieckermann, M.; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin; Siche, D.
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Wagner, Markus R.; Maultzsch, Janina; Dadgar, Armin; Strittmatter, André
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Nanoscale investigation of GaN / AlN quantum dot formation
Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications
Neugebauer, Silvio; Bläsing, Jürgen; Deckert, Martin; Lippert, Michael; Dadgar, Armin; Schmidt, Bertram; Ohl, Frank W.; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation
Challa, Seshagiri Rao; Vega, Nahuel; Kristukat, Christian; Müller, N. A.; Dabray, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors
Schmidt, Gordon; Veit, Peter; Schürmann, Hannes; Petzold, Silke; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Carbon incorporation in GaN by intrinsic and extrinsic C-doping
Dadgar, Armin; Jankowski, N.; Poliani, E.; Wagner, M. R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Bläsing, Jürgen; Hoffmann, Axel; Strittmatter, André
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
The collexon - a novel quasiparticle in heavily doped GaN stabilized by a degenerate electron gas
Wagner, Markus R.; Nenstiel, Christian; Callsen, Gordon; Nippert, Felix; Kure, Thomas; Schlichting, Sarah; Jankowski, Nadja; Hoffmann, Marc P.; Dadgar, Armin; Fritze, Stephanie; Krost, Alois; Beschstedt, Friedhelm; Hoffmann, Axel
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Revision of the TO phonon frequencies in wurtzite and zincblende GaN
Feneberg, Martin; Baron, Elias; Kluth, Elias; Lange, Karsten; Donat, As; Deppe, Michael; Tacken, Fabian; Wieneke, Matthias; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018
Buchbeitrag
Semiconductor quantum dot to fiber coupling system for 1.3m range
Žołnacz, Kinga; Urbańczyk, Wacław; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Musiał, Anna; Mrowiński, Paweł; Sek, Grzegorz; Poturaj, Krzysztof; Wójcik, Grzegorz; Mergo, Paweł; Dybka, Kamil; Dyrkacz, Marius; Dłubek, Michał
In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Vol. 10674.2018, Art. 106741R
Begutachteter Zeitschriftenartikel
Analysis of InAsSb/GaAs submonolayer stacks
Quandt, David; Bläsing, Jürgen; Strittmatter, André
In: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, Bd. 494 (2018), S. 1-7
Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses
Kaganskiy, Arsenty; Fischbach, Sarah; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan
In: Optics communications - Amsterdam : [Verlag nicht ermittelbar], Bd. 413 (2018), S. 162-166
A stand-alone fiber-coupled single-photon source
Schlehahn, Alexander; Fischbach, Sarah; Schmidt, Ronny; Kaganskiy, Arsenty; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan
In: Scientific reports - [London] : Macmillan Publishers Limited, part of Springer Nature - Vol. 8.2018, Art. 1340, insgesamt 7 S.
Generation of maximally entangled states and coherent control in quantum dot microlenses
Bounouar, Samir; Haye, Christoph; Strauß, Max; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan
In: Applied physics letters - Melville, NY : American Inst. of Physics - Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.
Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
Yacoub, Hady; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Aandrei; Dadgar, Armin; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André; Rennesson, Stephanie; Semond, Fabrice
In: Physica status solidi / A - Weinheim : Wiley-VCH - Vol. 215.2018, 9, Art. 1700638
Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography
Srocka, N.; Musiał, A.; Schneider, P.-I.; Mrowiński, P.; Holewa, P.; Burger, S.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sȩk, G.
In: AIP Advances - New York, NY : American Inst. of Physics - Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.
Two charge states of the C N acceptor in GaN - evidence from photoluminescence
Reshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, Ü.; Morkoç, H.; Lesnik, A.; Hoffmann, M. P.; Hörich, Florian; Dadgar, Armin; Strittmatter, André
In: Physical review - Woodbury, NY : Inst. - Vol. 98.2018, 12-15, Art. 125207
Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
Susilo, Norman; Roumeliotis, Georgios G.; Narodovitch, Michael; Witzigmann, Bernd; Rychetsky, Monir; Neugebauer, Silvio; Guttmann, Martin; Enslin, Johannes; Dadgar, Armin; Niermann, Tore; Wernicke, Tim; Strittmatter, André; Lehmann, Michael; Papadimitriou, Dimitra N.; Kneissl, Michael
In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.
Flexible modulation of electronic band structures of wide band gap GaN semiconductors using bioinspired, nonbiological helical peptides
Mehlhose, Sven; Frenkel, Nataliya; Uji, Hirotaka; Hölzel, Sara; Müntze, Gesche; Stock, Daniel; Neugebauer, Silvio; Dadgar, Armin; Abuillan, Wasim; Eickhoff, Martin; Kimura, Shunsaku; Tanaka, Motomu
In: Advanced functional materials - Weinheim: Wiley-VCH, 2001, 28(2018, 2) Artikel-Nummer 1704034, 10 Seiten[First published: 02 November 2017]
Gallium nitride vertical power devices on foreign substrates - a review and outlook
Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás
In: Journal of physics / D - Bristol : IOP Publ. - Vol. 51.2018, 27, Art. 273001, insgesamt 14 S.
Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
Feneberg, Martin; Winkler, Michael; Lange, Karsten; Wieneke, Matthias; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger
In: Applied physics express: APEX - Tokyo: Ōyō Butsuri-Gakkai, Vol. 11.2018, 10, Art. 101001
Electronic excitations stabilized by a degenerate electron gas in semiconductors
Nenstiel, C.; Callsen, G.; Nippert, F.; Kure, T.; Schlichting, S.; Jankowski, N.; Hoffmann, M. P.; Dadgar, Armin; Fritze, S.; Krost, Armin; Wagner, M. R.; Hoffmann, A.; Bechstedt, F.
In: Communications Physics - London: Springer Nature, 2018, Vol. 1.2018, Art. 38
Artikel in Kongressband
Photon noise suppression by a built-in feedback loop
Al-Ashouri, A.; Merkel, B.; Geller, M.; Ludwig, A.; Wieck, A. D.; Schulze, J.-H.; Strittmatter, André; Kurzmann, A.; Lorke, A.
In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.
2017
Begutachteter Zeitschriftenartikel
Properties of C-doped GaN
Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.
A bright triggered twin-photon source in the solid state
Heindel, T.; Thoma, A.; Helversen, M.; Schmidt, M.; Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Strittmatter, André; Beyer, J.; Rodt, S.; Carmele, A.; Knorr, A.; Reitzenstein, S.
In: Nature Communications - [London] : Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.
Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror
Fischbach, Sarah; Kaganskiy, Arsenty; Tauscher, Esra Burcu Yarar; Gericke, Fabian; Thoma, Alexander; Schmidt, Ronny; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Reitzenstein, S.
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.
Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping
Fariza, A.; Lesnik, A.; Neugebauer, S.; Wieneke, Matthias; Hennig, J.; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: Journal of applied physics - Melville, NY : American Inst. of Physics - Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.
All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
Neugebauer, S.; Hoffmann, M. P.; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Niermann, T.; Narodovitch, M.; Lehmann, M.
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.
Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
Strauß, Max; Kaganskiy, Arsenty; Voigt, Robert; Schnauber, Peter; Schulze, Jan-Hendrik; Rodt, Sven; Strittmatter, André; Reitzenstein, Stephan
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.
Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission
Maryński, A.; Mrowiński, P.; Ryczko, K.; Podemski, P.; Gawarecki, K.; Musiał, A.; Misiewicz, J.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sęk, G.
In: Acta physica Polonica / A - Warsaw : Acad. Inst, Bd. 132.2017, 2, S. 386-389
Path-controlled time reordering of paired photons in a dressed three-level cascade
Bounouar, Samir; Strauß, Max; Carmele, Alexander; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Hans-Peter; Strittmatter, André; Rodt, Sven; Knorr, Andreas; Reitzenstein, Stephan
In: Physical review letters - College Park, Md : APS, Vol. 118.2017, 23, Artikel 233601
Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source
Fischbach, Sarah; Schlehahn, Alexander; Thoma, Alexander; Srocka, Nicole; Gissibl, Timo; Ristok, Simon; Thiele, Simone; Kaganskiy, Arsenty; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Herkommer, Alois; Giessen, Harald; Reitzenstein, Stephan
In: ACS photonics / American Chemical Society - Washington, DC : ACS, Bd. 4 (2017), Heft 6, S. 1327-1332
Two-photon interference from remote deterministic quantum dot microlenses
Thoma, A.; Schnauber, P.; Böhm, J.; Gschrey, M.; Schulze, J.-H.; Strittmatter, André; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011104
Breakdown of far-field raman selection rules by light-plasmon coupling demonstrated by tip-enhanced raman scattering
Poliani, Emanuele; Wagner, Markus R.; Vierck, Asmus; Herziger, Felix; Nenstiel, Christian; Gannott, Florentina; Schweiger, Manuel; Fritze, Stephanie; Dadgar, Armin; Zaumseil, Jana; Krost, Alois; Hoffmann, Axel; Maultzsch, Janina
In: The journal of physical chemistry letters - Washington, DC: ACS, 2010, Bd. 8.2017, 22, S. 5462-5471
High-performance 500 V quasi- and fully-vertical GaN-on-Si pn diodes
Zhang, Yuhao; Piedra, Daniel; Sun, Min; Hennig, Jonas; Dadgar, Armin; Yu, Lili; Palacios, Tomás
In: IEEE electron device letters : a publication of the IEEE Electron Devices Society - New York, NY : IEEE, Bd. 38.2017, 2, S. 248-251
Radiation-induced alloy rearrangement in InxGa1 xN
Prozheeva, V.; Makkonen, I.; Cuscó, R.; Artús, L.; Dadgar, Armin; Plazaola, F.; Tuomisto, F.
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 13, Art. 132104, insgesamt 5 S.
Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
Zhang, Yuhao; Sun, Min; Piedra, Daniel; Hennig, Jonas; Dadgar, Armin; Palacios, Tomás
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 111.2017, 16, Art. 163506, insgesamt 5 S.
Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction
Holý, V.; Kriegner, D.; Lesnik, A.; Bläsing, Jürgen; Wieneke, M.; Dadgar, Armin; Harcuba, P.
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 12, Art. 121905, insgesamt 5 S.
Dissertation
Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter
Berger, Christoph; Strittmatter, André
In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm[Literaturverzeichnis: Seite 127-144]
Buchbeitrag
LED materials - GaN on Si
Dadgar, Armin; Krost, Alois
In: Handbook of Advanced Lighting Technology - Cham: Springer; Karlicek, Robert . - 2017, S. 123-147
2016
Buchbeitrag
On current injection into single quantum dots through oxide-confined pn-diodes
Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.
In: 2016, S. 215-216, unter URL: https://dx.doi.org/10.1109/NUSOD.2016.7547002, unter URL: 10.1109/TED.2016.2538561
Begutachteter Zeitschriftenartikel
Properties of C-doped GaN
Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961 . - 2016, insges. 7 S.
Investigation of proton damage in III-V semiconductors by optical spectroscopy
Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, André; Hoffmann, A.; Giudici, P.
In: Journal of applied physics: AIP's archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, 1931, Vol. 119.2016, 23, Art. 235702
Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
Neugebauer, Silvio; Metzner, Sebastian; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 118-125
Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses
Schlehahn, A.; Schmidt, R.; Hopfmann, C.; Schulze, J.-H.; Strittmatter, André; Heindel, T.; Gantz, L.; Schmidgall, E. R.; Gershoni, D.; Reitzenstein, S.
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 108.2016, 2, Art. 021104, insgesamt 6 S.
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12
Clustered quantum dots in single GaN islands formed at threading dislocations
Schmidt, Gordon; Veit, Peter; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.
On reduction of current leakage in GaN by carbon-doping
Fariza, Aqdas; Lesnik, Andreas; Bläsing, Jürgen; Hoffmann, Marc P.; Hörich, Florian; Veit, Peter; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.
Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
Jakubczyk, T.; Delmonte, V.; Fischbach, S.; Wigger, D.; Reiter, D.E.; Mermillod, Q.; Schnauber, P.; Kaganskiy, A.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Langbein, W.; Kuhn, T.; Reitzenstein, S.; Kasprzak, J.
In: 2016, Bd. 3, S. 2461-2466, unter URL: https://dx.doi.org/10.1021/acsphotonics.6b00707, unter URL: 10.1021/acsphotonics.6b00707
Strong amplitude-phase coupling in submonolayer quantum dots
Herzog, B.; Lingnau, B.; Kolarczik, M.; Kaptan, Y.; Bimberg, D.; Maaßdorf, A.; Pohl, U.W.; Rosales, R.; Schulze, J.-H.; Strittmatter, A.; Weyers, M.; Woggon, U.; Lüdge, K.; Owschimikow, N.
In: 2016, Bd. 109, unter URL: https://dx.doi.org/10.1063/1.4967833, unter URL: 10.1063/1.4967833
Growth and structure of In
Sala, E.M.; Stracke, G.; Selve, S.; Niermann, T.; Lehmann, M.; Schlichting, S.; Nippert, F.; Callsen, G.; Strittmatter, A.; Bimberg, D.
In: 2016, Bd. 109, unter URL: https://dx.doi.org/10.1063/1.4962273, unter URL: 10.1063/1.4962273
Investigation of proton damage in III-V semiconductors by optical spectroscopy
Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A.R.; Strittmatter, A.; Hoffmann, A.; Giudici, P.
In: 2016, Bd. 119, unter URL: https://dx.doi.org/10.1063/1.4953585, unter URL: 10.1063/1.4953585
Efficient current injection into single quantum dots through oxide-confined p-n-diodes
Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.
In: 2016, Bd. 63, S. 2036-2042, unter URL: https://dx.doi.org/10.1109/TED.2016.2538561, unter URL: 10.1109/TED.2016.2538561
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
Harrison, S.; Young, M.P.; Hodgson, P.D.; Young, R.J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U.W.; Bimberg, D.
In: 2016, Bd. 93, unter URL: https://dx.doi.org/10.1103/PhysRevB.93.085302, unter URL: 10.1103/PhysRevB.93.085302
Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments
Thoma, A.; Schnauber, P.; Gschrey, M.; Seifried, M.; Wolters, J.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Carmele, A.; Knorr, A.; Heindel, T.; Reitzenstein, S.
In: 2016, Bd. 116, unter URL: https://dx.doi.org/10.1103/PhysRevLett.116.033601, unter URL: 10.1103/PhysRevLett.116.033601
Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
Freytag, Stefan; Feneberg, Martin; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Callsen, Gordon; Hoffmann, Axel; Bokov, Pavel; Goldhahn, Rüdiger
In: Journal of applied physics - Melville, NY: American Inst. of Physics, Vol. 120.2016, 1, Art. 015703
Termination of hollow core nanopipes in GaN by an AlN interlayer
Contreras, O.; Ruiz-Zepeda, F.; Avalos-Borja, M.; Dadgar, Armin; Krost, Alois
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 455.2016, S. 43-48
Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
Schmidt, Gordon; Veit, Peter; Wieneke, Matthias; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Jürgen
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 73-77
2015
Buchbeitrag
Indistinguishable photons from deterministically fabricated quantum dot microlenses
Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: 2015, S. 371p, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938825799&partnerID=40&md5=d39f469d7a898acc9dc48272d584467d
31 - Growth of III/Vs on silicon - nitrides, phosphides, arsenides and antimonides
Volz, Kerstin; Stolz, Wolfgang; Dadgar, Armin; Krost, Alois
In: Handbook of crystal growth ; Vol. 3, Pt. B: Thin films and epitaxy: Materials, processes, and technology , 2. ed. - Amsterdam [u.a.] : Elsevier ; Kuech, Thomas F. . - 2015, S. 1249-1300
Begutachteter Zeitschriftenartikel
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Lesnik, Andreas; Veit, Peter; Schmidt, Gordon; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Strittmatter, André
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109
Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
Schlehahn, A.; Gaafar, M.; Vaupel, M.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Stolz, W.; Rahimi-Iman, A.; Heindel, T.; Koch, M.; Reitzenstein, S.
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.
Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing
Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.
Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
Hennig, Jonas; Dadgar, Armin; Witte, Hartmut; Bläsing, Jürgen; Lesnik, Andreas; Strittmatter, André; Krost, Alois
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.
Operating single quantum emitters with a compact Stirling cryocooler
Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Heindel, T.; Reitzenstein, S.
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.
Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.
Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
Herzog, B.; Owschimikow, N.; Schulze, J.-H.; Rosales, R.; Kaptan, Y.; Kolarczik, M.; Switaiski, T.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Woggon, U.
In: 2015, Bd. 107, unter URL: https://dx.doi.org/10.1063/1.4935792, unter URL: 10.1063/1.4935792
Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
Gschrey, M.; Thoma, A.; Schnauber, P.; Seifried, M.; Schmidt, R.; Wohlfeil, B.; Krüger, L.; Schulze, J.-H.; Heindel, T.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.
In: 2015, Bd. 6, unter URL: https://dx.doi.org/10.1038/ncomms8662, unter URL: 10.1038/ncomms8662
Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy
Quandt, D.; Schulze, J.-H.; Schliwa, A.; Diemer, Z.; Prohl, C.; Lenz, A.; Eisele, H.; Strittmatter, A.; Pohl, U.W.; Gschrey, M.; Rodt, S.; Reitzenstein, S.; Bimberg, D.; Lehmann, M.; Weyland, M.
In: 2015, Bd. 91, unter URL: https://dx.doi.org/10.1103/PhysRevB.91.235418, unter URL: 10.1103/PhysRevB.91.235418
Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication
Gschrey, M.; Schmidt, R.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.
In: 2015, Bd. 33, unter URL: https://dx.doi.org/10.1116/1.4914914, unter URL: 10.1116/1.4914914
Strain field of a buried oxide aperture
Kießling, F.; Niermann, T.; Lehmann, M.; Schulze, J.-H.; Strittmatter, A.; Schliwa, A.; Pohl, U.W.
In: 2015, Bd. 91, unter URL: https://dx.doi.org/10.1103/PhysRevB.91.075306, unter URL: 10.1103/PhysRevB.91.075306
Desorption induced GaN quantum dots on (0001) AlN by MOVPE
Bellmann, K.; Tabataba-Vakili, F.; Wernicke, T.; Strittmatter, A.; Callsen, G.; Hoffmann, A.; Kneissl, M.
In: 2015, Bd. 9, S. 526-529, unter URL: https://dx.doi.org/10.1002/pssr.201510217, unter URL: 10.1002/pssr.201510217
230 s room-temperature storage time and 1.14 eV hole localization energy in In
Bonato, L.; Sala, E.M.; Stracke, G.; Nowozin, T.; Strittmatter, A.; Ajour, M.N.; Daqrouq, K.; Bimberg, D.
In: 2015, Bd. 106, unter URL: https://dx.doi.org/10.1063/1.4906994, unter URL: 10.1063/1.4906994
Germanium - the superior dopant in n-type GaN
Nenstiel, C.; Bügler, M.; Callsen, G.; Nippert, F.; Kure, T.; Fritze, S.; Dadgar, Armin; Witte, Hartmut; Bläsing, Jürgen; Krost, A.; Hoffmann, A.
In: Physica status solidi / Rapid research letters - Weinheim: Wiley-VCH, Bd. 9 (2015), 12, S. 716-721
Sixteen years GaN on Si
Dadgar, Armin
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 1063-1068
2014
Buchbeitrag
Indistinguishable photons from deterministic quantum dot microlenses
Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: 2014, Bd. Part F3-EQEC 2015, https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016559968&partnerID=40&md5=bf81fc7624fc5b7556b19061c615735b
Index-coupled quantum-dot distributed-feedback lasers
Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.
In: 2014, S. 240-241, unter URL: https://dx.doi.org/10.1109/IPCon.2014.6995337, unter URL: 10.1109/IPCon.2014.6995337
Fabrication of deterministic quantum light sources using cathodoluminescence lithography
Gschrey, M.; Gericke, F.; Schmidt, R.; Schlottmann, E.; Schüssler, A.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84899739511&partnerID=40&md5=f369483f7203ca07497948edbe9cb96a
Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, Bd. 2014-January, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84944699313&partnerID=40&md5=3b9e01a819da82c754b1cc07f4c15c4a
Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heinde, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905482276&partnerID=40&md5=0c609ea395f59badbe1622dfc87026c0
Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906084663&partnerID=40&md5=bb40ca7ad3e89534dbc9e6782523fe63
Begutachteter Zeitschriftenartikel
Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots
Stracke, G.; Sala, E.M.; Selve, S.; Niermann, T.; Schliwa, A.; Strittmatter, A.; Bimberg, D.
In: 2014, Bd. 104, unter URL: https://dx.doi.org/10.1063/1.4870087, unter URL: 10.1063/1.4870087
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger, C.; Dadgar, A.; Bläsing, J.; Lesnik, A.; Veit, P.; Schmidt, G.; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.
In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008
15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots
Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.
In: 2014, unter URL: https://dx.doi.org/10.1063/1.4887063, unter URL: 10.1063/1.4887063
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
Feneberg, Martin; Osterburg, Sarah; Lange, Karsten; Lidig, Christian; Garke, Bernd; Goldhahn, Rüdiger; Richter, Eberhard; Netzel, Carsten; Neumann, Maciej D.; Esser, Norbert; Fritze, Stephanie; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 90.2014, 7, Art. 075203, insgesamt 10 S.
Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto-electronic structures
Schulz, Oliver; Dadgar, Armin; Hennig, Jonas; Krumm, Oliver; Fritze, Stephanie; Bläsing, Jürgen; Witte, Hartmut; Diez, Annette; Krost, Alois
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 11.2014, 3/4, S. 397-400
High-pressure Raman scattering in InGaN heteroepitaxial layers - effect of the substrate on the phonon pressure coefficients
Oliva, R.; Ibáñez, J.; Cuscó, R.; Dadgar, Armin; Krost, Alois; Gandhi, J.; Bensaoula, A.; Artús, L.
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Bd. 104.2014, 14, Art. 142101, insgesamt 5 S.
High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT
Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Hauser, Marcus J. B.; Krost, Alois
In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 47.2014, 42, Art. 425401, insgesamt 10 S.
Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis
Lesnik, Andreas; Bläsing, Jürgen; Hennig, Jonas; Dadgar, Armin; Krost, Alois
In: Journal of physics. - Bristol : IOP PublJournal of physics / D; Vol. 47.2014, 35, Art. 355106, insgesamt 6 S.
Dissertation
Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy
Ravash, Roghaiyeh; Dadgar, Armin
In: Magdeburg Univ., Fak. für Naturwiss., Diss., 2014, 135 S., Ill., graph. Darst., 30 cm
Wachstumsoptimierung und Charakterisierung von MOVPE-basierten GaN Pufferstrukturen auf Si(111) Substraten
Fritze, Stephanie; Dadgar, Armin
In: Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014, XII, 161 S., Ill., graph. Darst.
2013
Buchbeitrag
Self-aligned quantum-dot growth for single-photon sources
Pohl, U.W.; Strittmatter, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Unrau, W.; Heindel, T.; Hitzemann, O.; Bimberg, D.; Reitzenstein, S.
In: 2013, unter URL: https://dx.doi.org/10.1109/ICIPRM.2013.6562566, unter URL: 10.1109/ICIPRM.2013.6562566
Epitaxial growth and benefits of GaN on silicon in III-nitride semiconductors and their modern devices
Dadgar, Armin; Krost, Alois
In: Gil, Bernard: : III-Nitride Semiconductors and their Modern Devices. - Oxford : Univ. Press, S. 78-120, 2013 - (Series on Semiconductor Science and Technology; 18)
Begutachteter Zeitschriftenartikel
Spatial structure of In
Prohl, C.; Lenz, A.; Roy, D.; Schuppang, J.; Stracke, G.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Eisele, H.; Dähne, M.
In: 2013, Bd. 102, unter URL: https://dx.doi.org/10.1063/1.4798520, unter URL: 10.1063/1.4798520
Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
Switaiski, T.; Woggon, U.; Alden Angeles, D.E.; Hoffmann, A.; Schulze, J.-H.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.
In: 2013, Bd. 88, unter URL: https://dx.doi.org/10.1103/PhysRevB.88.035314, unter URL: 10.1103/PhysRevB.88.035314
In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
Gschrey, M.; Gericke, F.; Schüßler, A.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.
In: 2013, Bd. 102, unter URL: https://dx.doi.org/10.1063/1.4812343, unter URL: 10.1063/1.4812343
In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Krost, Alois
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 370.2013, S. 87-91
Growth and characterization of stacking fault reduced GaN(101̄3) on sapphire
Bläsing, Jürgen; Holý, Vaclav; Dadgar, Armin; Veit, Peter; Christen, Jürgen; Ploch, Simon; Frentrup, Martin; Wernicke, Tim; Kneissl, Michael; Krost, Alois
In: Journal of physics. - Bristol : IOP PublJournal of physics / D, Bd. 46.2013, 12, insges. 4 S.
Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers
Dadgar, Armin; Groh, Lars; Metzner, Sebastian; Neugebauer, Silvio; Bläsing, Jürgen; Hempel, Thomas; Bertram, Frank
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 102.2013, 6, Art. 062110, insgesamt 4 S.
Anisotropic bow and plastic deformation of GaN on silicon
Dadgar, Armin; Fritze, Stephanie; Schulze, Oliver; Hennig, Jonas; Bläsing, Jürgen; Witte, Hartmut; Diez, Annette; Heinle, U.; Kunze, M.; Daumiller, I.; Haberland, K.; Krost, Alois
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 278-281
Anisotropy of effective electron masses in highly doped nonpolar GaN
Feneberg, Martin; Lange, Karsten; Lidig, Christian; Wieneke, Matthias; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 23, Art. 232104, insgesamt 5 S.
Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
Wieneke, Matthias; Witte, Hartmut; Lange, Karsten; Feneberg, Martin; Dadgar, Armin; Bläsing, Jürgen; Goldhahn, Rüdiger; Krost, Alois
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art. 012103, insgesamt 4 S.
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
Romero, María Fátima; Feneberg, Martin; Moser, Pascal; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Sakalauskas, Egidijus; Calle, Fernando; Goldhahn, Rüdiger
In: Japanese journal of applied physics - Bristol: IOP Publ, Vol. 52.2013, Art. 08jk02, insgesamt 4 S.
MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
Ravash, Roghaiyeh; Dadgar, Armin; Bertram, Frank; Dempewolf, Anja; Metzner, Sebastian; Hempel, Thomas; Christen, Jürgen; Krost, Alois
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 288-292
2012
Buchbeitrag
Site-selective growth of single quantum dots
Strittmatter, A.
In: 2012, Bd. 209, S. 2378, unter URL: https://dx.doi.org/10.1002/pssa.201221943, unter URL: 10.1002/pssa.201221943
Begutachteter Zeitschriftenartikel
High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots
Posilovic, K.; Kalosha, V.P.; Winterfeldt, M.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Strittmatter, A.; Bimberg, D.; Pohl, J.; Weyers, M.
In: 2012, Bd. 48, S. 1419-1420, unter URL: https://dx.doi.org/10.1049/el.2012.3174, unter URL: 10.1049/el.2012.3174
Atomic structure of closely stacked InAs submonolayer depositions in GaAs
Niermann, T.; Kieling, F.; Lehmann, M.; Schulze, J.-H.; Germann, T.D.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.
In: 2012, Bd. 112, unter URL: https://dx.doi.org/10.1063/1.4758301, unter URL: 10.1063/1.4758301
Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
Germann, T.D.; Hofmann, W.; Nadtochiy, A.M.; Schulze, J.-H.; Mutig, A.; Strittmatter, A.; Bimberg, D.
In: 2012, Bd. 20, S. 5099-5107, unter URL: https://dx.doi.org/10.1364/OE.20.005099, unter URL: 10.1364/OE.20.005099
Site-controlled quantum dot growth on buried oxide stressor layers
Strittmatter, A.; Holzbecher, A.; Schliwa, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.
In: 2012, Bd. 209, S. 2411-2420, unter URL: https://dx.doi.org/10.1002/pssa.201228407, unter URL: 10.1002/pssa.201228407
Growth of In
Stracke, G.; Glacki, A.; Nowozin, T.; Bonato, L.; Rodt, S.; Prohl, C.; Lenz, A.; Eisele, H.; Schliwa, A.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.
In: 2012, Bd. 101, unter URL: https://dx.doi.org/10.1063/1.4768294, unter URL: 10.1063/1.4768294
Lateral positioning of InGaAs quantum dots using a buried stressor
Strittmatter, A.; Schliwa, A.; Schulze, J.-H.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.
In: 2012, Bd. 100, unter URL: https://dx.doi.org/10.1063/1.3691251, unter URL: 10.1063/1.3691251
Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
Unrau, W.; Quandt, D.; Schulze, J.-H.; Heindel, T.; Germann, T.D.; Hitzemann, O.; Strittmatter, A.; Reitzenstein, S.; Pohl, U.W.; Bimberg, D.
In: 2012, Bd. 101, unter URL: https://dx.doi.org/10.1063/1.4767525, unter URL: 10.1063/1.4767525
Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
Franke, Alexander; Bastek, B.; Sterling, Stefan; August, Olga; Petzold, Silke; Veit, Peter; Christen, Jürgen; Moser, P.; Wieneke, Matthias; Berger, Christoph; Bläsing, J.; Dadgar, Armin; Krost, Alois
In: MRS online proceedings library - Warrendale, Pa.: MRS, 1998, Bd. 1396.2012[MRS Fall Meeting 2011]
Thermally oxidized InAlN of different compositions for InAlN/GaN heterostructure field-effect transistors
Kordoš, P.; Mikulics, M.; Stoklas, R.; Čičo, K.; Dadgar, Armin; Grützmacher, D.; Krost, Alois
In: Journal of electronic materials. - Warrendale, Pa : TMS, Bd. 41.2012, 11, S. 3013-3016
Cathodoluminescence directly performed in a transmission electron microscope - nanoscale correlation of structural and optical properties
Christen, Jürgen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Petzold, S.; Ravash, R.; Dadgar, Armin; Krost, A.
In: Microscopy and microanalysis - New York, NY: Cambridge University Press, Bd. 18 (2012), S2, S. 1834-1835
Originalartikel in begutachteter internationaler Zeitschrift
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
Romero, Maria Fatima; Feneberg, Martin; Moser, Pascal; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Sakalauskas, E.; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.
Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
Fritze, S.; Drechsel, P.; Stauss, P.; Rode, P.; Markurt, T.; Schulz, T.; Albrecht, M.; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Journal of applied physics. - Melville, NY : AIP, Bd. 111.2012, 12, insges. 6 S.
High Si and Ge n-type doping of GaN doping - Limits and impact on stress
Fritze, S.; Dadgar, Armin; Witte, Hartmut; Bügler, M.; Rohrbeck, A.; Bläsing, Jürgen; Hoffmann, A.; Krost, Alois
In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, 100.2012, 12, Art. 122104, insgesamt 4 S.
Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Franke, Alexander; Hempel, Thomas; Goldhahn, Rüdiger; Christen, Jürgen; Krost, Alois
In: Physica status solidi: pss: pss - Berlin: Wiley-VCH, 2002, Bd. 9.2012, 5, S. 1253-1258[Special Issue: 9th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets (ISCOM 2011)]
Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
Sakalauskas, E.; Wieneke, Matthias; Dadgar, Armin; Gobsch, G.; Krost, Alois; Goldhahn, Rüdiger
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 209.2012, 1, S. 29-32
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
Romero, Michael F.; Feneberg, Martin; Moser, Pascal; Berger, C.; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Sakalauskas, Egidijus; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.
Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)
Ravash, Roghaiyeh; Veit, Peter; Müller, Mathias; Schmidt, Gordon; Dempewolf, Anja; Hempel, Thomas; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Krost, Alois
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 3/4, S. 507-510
2011
Buchbeitrag
InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
Chua, C.; Yang, Z.; Knollenberg, C.; Teepe, M.; Cheng, B.; Strittmatter, A.; Bour, D.; Johnson, N.M.
In: 2011, Bd. 7939, unter URL: https://dx.doi.org/10.1117/12.875188, unter URL: 10.1117/12.875188
Begutachteter Zeitschriftenartikel
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
Lenz, A.; Eisele, H.; Becker, J.; Schulze, J.-H.; Germann, T.D.; Luckert, F.; Pötschke, K.; Lenz, E.; Ivanova, L.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Dähne, M.
In: 2011, Bd. 29, unter URL: https://dx.doi.org/10.1116/1.3602470, unter URL: 10.1116/1.3602470
In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
Wunderer, T.; Northrup, J.E.; Yang, Z.; Teepe, M.; Strittmatter, A.; Johnson, N.M.; Rotella, P.; Wraback, M.
In: 2011, Bd. 99, unter URL: https://dx.doi.org/10.1063/1.3663575, unter URL: 10.1063/1.3663575
Semi-polar nitride surfaces and heterostructures
Strittmatter, A.; Northrup, J.E.; Johnson, N.M.; Kisin, M.V.; Spiberg, P.; El-Ghoroury, H.; Usikov, A.; Syrkin, A.
In: 2011, Bd. 248, S. 561-573, unter URL: https://dx.doi.org/10.1002/pssb.201046422, unter URL: 10.1002/pssb.201046422
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers
Strittmatter, A.; Teepe, M.; Knollenberg, C.; Johnson, N.M.
In: 2011, Bd. 314, S. 1-4, unter URL: https://dx.doi.org/10.1016/j.jcrysgro.2010.09.064, unter URL: 10.1016/j.jcrysgro.2010.09.064
Anderes Material
Heavy Si doping - the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Wieneke, Matthias; Noltemeyer, Martin; Bastek, Barbara; Rohrbeck, Antje; Witte, Hartmut; Veit, Peter; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Krost, Alois
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 578-582
Originalartikel in begutachteter internationaler Zeitschrift
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Rossbach, Georg; Feneberg, Martin; Röppischer, Marcus; Werner, Christoph; Esser, Norbert; Cobet, Christoph; Meisch, Tobias; Thonke, Klaus; Dadgar, Armin; Bläsing, Jürgen; Krost, Alois; Goldhahn, Rüdiger
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.
Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)
Witte, Hartmut; Rohrbeck, A.; Günther, K.-M.; Saengkaew, P.; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1597-1599
Al xGa1- xN/GaN heterostructures on a thin silicon-on-insulator substrate for metalsemiconductormetal photodetectors
Lin, Vivian Kaixin; Dolmanan, Surani-bin; Teo, Siew Lang; Kim, Hui Hui; Alarcon-Llado, Esther; Dadgar, Armin; Krost, Alois; Tripathy, Sudhiranjan
In: Journal of physics / D - Bristol: IOP Publ, 44.2011, 36, Art. 365102, insgesamt 7 S.
Crack-free, highly conducting GaN layers on Si substrates by Ge doping
Dadgar, Armin; Bläsing, Jürgen; Diez, Annette; Krost, Alois
In: Applied physics express: APEX - Tokyo: IOP Publ, 4.2011, Art. 011001, insgesamt 3 S.
StranskiKrastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
Krost, Alois; Berger, C.; Moser, Pascal; Bläsing, Jürgen; Dadgar, Armin; Hums, C.; Hempel, Thomas; Bastek, Barbara; Veit, Peter; Christen, Jürgen
In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 26.2011, 1, insges. 8 S.
Unintentional doping of a-plane GaN by insertion of in situ SiN masks
Witte, Hartmut; Wieneke, Matthias; Rohrbeck, A.; Guenther, K. M.; Dadgar, Armin; Krost, Alois
In: Journal of physics / D - Bristol: IOP Publ, Bd. 44.2011, 8, insges. 4 S.
Characterization of AlGaInN layers using X-ray diffraction and fluorescence
Groh, Lars; Hums, Christoph; Bläsing, Jürgen; Krost, Alois; Dadgar, Armin
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 622-626
Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
Ravash, Roghaiyeh; Bläsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 594-599
Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
Franke, Alexander; Bastek, B.; Krimmling, J.; Christen, Jürgen; Moser, Pascal; Dadgar, Armin; Krost, Alois
In: Superlattices and microstructures: a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces - Oxford [u.a.]: Elsevier Science, Academic Press, Bd. 49.2011, 3, S. 187-192[Special issue: Proceedings of the 10th International Conference on the Physics of LightMatter Coupling in Nanostructures, PLMCN 2010 (Cuernavaca, Mexico), 12-16 April, 2010]
Stress relaxation in low-strain AlInN/GaN bragg mirrors
Moser, Pascal; Bläsing, Jürgen; Dadgar, Armin; Hempel, Thomas; Christen, Jürgen; Krost, Alois
In: Japanese journal of applied physics: JJAP - Tokyo: IOP Publ, 50.2011, 3, Art. 031002, insgesamt 6 S.
Thin-film InGaN/GaN vertical light emitting diodes using GaN on silicon-on-insulator substrates
Dolmanan, Surani Bin; Teo, Siew Lang; Lin, Vivian Kaixin; Hui, Hui Kim; Dadgar, Armin; Krost, Alois; Tripathy, Sudhiranjan
In: Electrochemical and solid-state letters: a joint publication of the Electrochemical Society and the Institute of Electrical and Electronics Engineers - Pennington, NJ: Soc, 14.2011, 11, S. H460-H463
Eliminating stacking faults in semi-polar GaN by AlN interlayers
Dadgar, Armin; Ravash, Roghaiyeh; Veit, Peter; Schmidt, G.; Müller, Mathias; Dempewolf, Anja; Bertram, Frank; Wieneke, Matthias; Christen, Jürgen; Krost, Alois
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021905, insgesamt 3 S.
Comment on "the effects of Si doping on dislocation movement and tensile stress in GaN films"
Dadgar, Armin; Krost, Alois
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 9, Art. 096110, insgesamt 2 S.
Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
Sakalauskas, E.; Wieneke, Matthias; Dadgar, Armin; Gobsch, G.; Krost, Alois; Goldhahn, Rüdiger
In: Physica status solidi / A - Weinheim: Wiley-VCH, insges. 4 S., 2011
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Rossbach, Georg; Feneberg, Martin; Röppischer, Marcus; Werner, Christoph; Esser, Norbert; Cobet, Christoph; Meisch, Tobias; Thonke, Klaus; Dadgar, Armin; Bläsing, Jürgen; Krost, Alois; Goldhahn, Rüdiger
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.
Originalartikel in begutachteter zeitschriftenartiger Reihe
Improving GaN-on-silicon properties for GaN device epitaxy
Dadgar, Armin; Hempel, Thomas; Bläsing, Jürgen; Schulz, O.; Fritze, Stephanie; Christen, Jürgen; Krost, Alois
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1503-1508[Special Issue: 3rd International Symposium on Growth of Group III-Nitrides (ISGN 3) E-MRS 2010 Spring Meeting Symposium G: Physics and Applications of Novel Gain Materials Based on IIIVN Compounds 14th International Conference on High Pressure Semiconductor Physics (HPSP14)]
2010
Buchbeitrag
Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
Strittmatter, A.; Teepe, M.; Yang, Z.; Chua, C.; Northrup, J.; Johnson, N.M.; Spiberg, P.; Brown, R.G.W.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.
In: 2010, Bd. 7, S. 1814-1816, unter URL: https://dx.doi.org/10.1002/pssc.200983557, unter URL: 10.1002/pssc.200983557
Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
Strittmatter, A.; Teepe, M.; Knollenberg, C.; Yang, Z.; Chua, C.; Johnson, N.M.; Spiberg, P.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.
In: 2010, Bd. 7616, unter URL: https://dx.doi.org/10.1117/12.842177, unter URL: 10.1117/12.842177
Begutachteter Zeitschriftenartikel
Nitride laser diodes with nonepitaxial cladding layers
Cheng, B.; Chua, C.L.; Yang, Z.; Teepe, M.; Knollenberg, C.; Strittmatter, A.; Johnson, N.
In: 2010, Bd. 22, S. 329-331, unter URL: https://dx.doi.org/10.1109/LPT.2009.2039564, unter URL: 10.1109/LPT.2009.2039564
Structural characterization of thick (112Ì¿2) GaN layers grown by HVPE on m-plane sapphire
Usikov, A.; Soukhoveev, V.; Shapovalov, L.; Syrkin, A.; Ivantsov, V.; Scanlan, B.; Nikiforov, A.; Strittmatter, A.; Johnson, N.; Zheng, J.-G.; Spiberg, P.; El-Ghoroury, H.
In: 2010, Bd. 207, S. 1295-1298, unter URL: https://dx.doi.org/10.1002/pssa.200983655, unter URL: 10.1002/pssa.200983655
Large internal dipole moment in InGaN/GaN quantum dots
Ostapenko, I.A.; Hönig, G.; Kindel, C.; Rodt, S.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2010, Bd. 97, unter URL: https://dx.doi.org/10.1063/1.3477952, unter URL: 10.1063/1.3477952
Atomic Structure of buried InAs sub-monolayer depositions in GaAs
Lenz, A.; Eisele, H.; Becker, J.; Ivanova, L.; Lenz, E.; Luckert, F.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dähne, M.
In: 2010, Bd. 3, unter URL: https://dx.doi.org/10.1143/APEX.3.105602, unter URL: 10.1143/APEX.3.105602
Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
Germann, T.D.; Strittmatter, A.; Mutig, A.; Nadtochiy, A.M.; Lott, J.A.; Blokhin, S.A.; Karachinsky, L.Y.; Shchukin, V.A.; Ledentsov, N.N.; Pohl, U.W.; Bimberg, D.
In: 2010, Bd. 7, S. 2552-2554, unter URL: https://dx.doi.org/10.1002/pssc.200983889, unter URL: 10.1002/pssc.200983889
Optical properties of InN grown on templates with controlled surface polarities
Kirste, R.; Wagner, M.R.; Schulze, J.H.; Strittmatter, A.; Collazo, R.; Sitar, Z.; Alevli, M.; Dietz, N.; Hoffmann, A.
In: 2010, Bd. 207, S. 2351-2354, unter URL: https://dx.doi.org/10.1002/pssa.201026086, unter URL: 10.1002/pssa.201026086
InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
Mikulics, M.; Stoklas, R.; Dadgar, Armin; Gregušová, D.; Novak, J.; Grützmacher, D.; Krost, Alois; Kordos, P.
In: Applied physics letters - Melville, NY : AIP, Bd. 97 (2010), Heft 17, S. 173505-1-173505-3
Herausgeberschaft
III-V compound semiconductors - integration with silicon-based microelectronics
Li, Tingkai; Mastro, Michael A.; Dadgar, Armin
In: Boca Raton, Fla. [u.a.]: CRC Press; X, 593 S.: Ill., graph. Darst., ISBN 978-1-439-81522-9, 2010[Literaturangaben]
Originalartikel in begutachteter internationaler Zeitschrift
Semipolar single component GaN on planar high index Si(11h) substrates
Ravash, Roghaiyeh; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 14, insges. 3 S.
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
Sakalauskas, Egidijus; Behmenburg, Hannes; Hums, C.; Schley, Pascal; Rossbach, Georg; Giesen, C.; Heuken, Michael; Kalisch, Holger; Jansen, Rolf H.; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Goldhahn, Rüdiger
In: Journal of physics / D - Bristol : IOP Publ., Bd. 43 (2010), Heft 36, S. 1-10, Artikel 365102
Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator
Lin, Vivian K. X.; Tripathy, S.; Teo, S. L.; Dolmanan, S. B.; Dadgar, Armin; Noltemeyer, Martin; Franke, Alexander; Bertram, Frank; Christen, Jürgen; Krost, Alois
In: Electrochemical and solid-state letters: a joint publication of the Electrochemical Society and the Institute of Electrical and Electronics Engineers - Pennington, NJ: Soc., 13.2010, 10, S. H343-H345
Monitoring glycolytic oscillations using AlGaN/GaN high electron mobility transistors (HEMTs)
Warnke, Christian; Witte, Hartmut; Mair, Thomas; Hauser, Marcus; Dadgar, Armin; Krost, Alois
In: Sensors and actuators . - Amsterdam [u.a.] : Elsevier, Bd. 149.2010, 1, S. 310-313
Microstructure of gallium nitride films grown on silicon (110)
Ruiz-Zepeda, F.; Contreras, O.; Dadgar, Armin; Krost, Alois
In: Applied physics letters . - Melville, NY : AIP, Bd. 96.2010, 23, insges. 3 S.
Valence-band splitting and optical anisotropy of AlN
Rossbach, G.; Röppischer, M.; Schley, P.; Gobsch, G.; Werner, C.; Cobet, C.; Esser, N.; Dadgar, Armin; Wieneke, Matthias; Krost, Alois; Goldhahn, Rüdiger
In: Physica status solidi . - Weinheim : Wiley-VCH, insges. 4 S.; Abstract
Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
Bastek, Barbara; August, Olga; Hempel, Thomas; Christen, Jürgen; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Wendt, Ulrich
In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.
Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces
Reiher, F.; Dadgar, Armin; Bläsing, Jürgen; Wieneke, Matthias; Krost, Alois
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 312.2010, 2, S. 180-184
Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex situ X-ray diffraction
Berger, C.; Moser, Pascal; Dadgar, Armin; Bläsing, Jürgen; Clos, Rainer; Krost, Alois
In: Materials science & engineering . - Amsterdam [u.a.] : Elsevier, Bd. 528.2010, 1, S. 58-64
Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering
Alarcón-Lladó, Esther; Bin-Dolmanan, Surani; Kai Xin Lin, Vivian; Lang Teo, Siew; Dadgar, Armin; Krost, Alois; Tripathy, Sudhiranjan
In: Journal of applied physics . - Melville, NY : AIP, Bd. 108.2010, 11, S. 114501-1-114501-5
X-ray study of step induced lateral correlation lengths in thin AlGaN nucleation layers
Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Japanese journal of applied physics . - Tokyo : Oyo Butsuri Gakkai, Bd. 49.2010, 2, insges. 3 S.
Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
Krost, Alois; Berger, C.; Bläsing, Jürgen; Franke, Alexander; Hempel, Thomas; Dadgar, Armin; Christen, Jürgen
In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3
Originalartikel in begutachteter zeitschriftenartiger Reihe
Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media
Witte, Hartmut; Charpentier, Michael; Warnke, Christian; Müller, Mathias; Günther, Kay-Michael; Dadgar, Armin; Krost, Alois
In: Physica status solidi: pss - Berlin: Wiley-VCH, 2002, Bd. 7 (2010), 2, S. 464-467
Light extraction from GaN-based LED structures on silicon-on-insulator substrates
Tripathy, S.; Teo, S. L.; Lin, V. K. X.; Chen, M. F.; Dadgar, Armin; Christen, Jürgen; Krost, Alois
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 1, S. 88-91
2009
Buchbeitrag
Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
Ledentsov, N.N.; Lott, J.A.; Shchukin, V.A.; Quast, H.; Hopfer, F.; Fiol, G.; Mutig, A.; Moser, P.; Germann, T.; Strittmatter, A.; Karachinsky, L.Y.; Blokhin, S.A.; Novikov, I.I.; Nadtochi, A.M.; Zakharov, N.D.; Werner, P.; Bimberg, D.
In: 2009, Bd. 7224, unter URL: https://dx.doi.org/10.1117/12.810192, unter URL: 10.1117/12.810192
High-overtone bulk acoustic wave resonator on galliumnitride
Loschonsky, Marc; Eisele, David; Masson, Jeremy; Wieneke, Matthias; Alzuaga, Sebastien; Dadgar, Armin; Ballandras, Sylvian; Krost, Alois; Reindl, Leonhard M.
In: IEEE International Frequency Control Symposium, 2009 joint with the 22nd [i.e. 23rd] European Frequency and Time Forum - Piscataway, NJ: IEEE . - 2009, S. 309 - 315Kongress: IEEE International Frequency Control Symposium 63 (Besançon : 2009.04.20-24)
Begutachteter Zeitschriftenartikel
InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal--organic vapour phase epitaxy
Reiher, F.; Dadgar, A.; Bläsing, J.; Wieneke, M.; Müller, M.; Franke, A.; Reißmann, L.; Christen, J.; Krost, A.
In: Journal of Physics D: Applied Physics, Vol. 42, Issue 5, S. 055107, ISSN 0022-3727, 2009, 10.1088/0022-3727/42/5/055107
Originalartikel in begutachteter internationaler Zeitschrift
MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs
Saengkaew, Phannee; Dadgar, Armin; Bläsing, Jürgen; Bastek, Barbara; Bertram, Frank; Reiher, Fabian; Hums, Christoph; Noltemeyer, Martin; Hempel, Thomas; Veit, Peter; Christen, Jürgen; Krost, Alois
In: Physica status solidi / C - Berlin: Wiley-VCH . - 2009, insges. 4 S.
Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
Bastek, Barbara; Bertram, Frank; Christen, Jürgen; Hempel, Thomas; Dadgar, Armin; Krost, Alois
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.
Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
Ravash, Roghaiyeh; Bläsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois
In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, Bd. 95.2009, 24, Art. 242101
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
Witte, Hartmut; Günther, K.-M.; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Physica . - Amsterdam : North-Holland Physics Publ., Bd. 404.2009, 23/24, S. 4922-4924
Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
Schenk, H. P. D.; Borenstain, S. I.; Berezin, A.; Schön, A.; Cheifetz, E.; Dadgar, Armin; Krost, Alois
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 16, S. 3984-3988
Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)
Saengkaew, Phannee; Dadgar, Armin; Bläsing, Jürgen; Hempel, Thomas; Veit, Peter; Christen, Jürgen; Krost, Alois
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748
Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets
Mei, Yongfeng; Thurmer, Dominic J.; Deneke, Christoph; Kiravittaya, Suwit; Chen, Yuan-Fu; Dadgar, Armin; Bertram, Frank; Bastek, Barbara; Krost, Alois; Christen, Jürgen; Reindl, Thomas; Stoffel, Mathieu; Coric, Emica; Schmidt, Oliver G.
In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668
AllnN/GaN based multi quantum well structures - growth and optical proberties
Hums, Christoph; Gadanecz, Aniko; Dadgar, Armin; Bläsing, Jürgen; Lorenz, Pierre; Krischok, Stefan; Bertram, Frank; Franke, Alexander; Schäfer, Jürgen A.; Christen, Jürgen; Krost, Alois
In: Physica status solidi / C - Berlin: Wiley-VCH . - 2009, insges. 4 S.
Influence of anisotropic strain on excitonic transitions in a-plane GaN films
Buchheim, Carsten; Röppischer, Marcus; Goldhahn, Rüdiger; Gobsch, Gerhard; Cobet, Christoph; Werner, C.; Esser, Norbert; Dadgar, Armin; Wieneke, Matthias; Bläsing, Jürgen; Krost, Alois
In: Microelectronics journal - Oxford: Elsevier Advanced Technology, Bd. 40 (2009), 2, S. 322-324
Photoelectric proberties of the undoped GaN/AlN interlayer/high purity Si(111) interface
Witte, Hartmut; Hums, Christoph; Baer, C.; Günther, K.-M.; Krtschil, A.; Dadgar, Armin; Krost, Alois
In: Journal of physics . - Bristol : IOP Publ., Bd. 42.2009, 20, insges. 6 S.
Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Krost, Alois
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract
Originalartikel in begutachteter zeitschriftenartiger Reihe
GaN-based deep green light emitting diodes on silicon-on-insulator substrates
Tripathy, S.; Dadgar, Armin; Zang, K. Y.; Lin, V. K. X.; Liu, Y. C.; Teo, S. L.; Yong, A. M.; Soh, C. B.; Chua, S. J.; Bläsing, Jürgen; Christen, Jürgen; Krost, Alois
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825[Supplement: International Workshop on Nitride Semiconductors (IWN 2008)]
2008
Buchbeitrag
Characterisation of an InAs quantum dot semiconductor disk laser
Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.
In: 2008, unter URL: https://dx.doi.org/10.1109/CLEO.2008.4551842, unter URL: 10.1109/CLEO.2008.4551842
High-speed directly and indirectly modulated VCSELs
Hopfer, F.; Mutig, A.; Strittmatter, A.; Fiol, G.; Moser, P.; Bimberg, D.; Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Kuntz, M.; Mikhrin, S.S.; Krestnikov, I.L.; Livshits, D.A.; Kovsh, A.R.; Bornholdt, C.
In: 2008, unter URL: https://dx.doi.org/10.1109/ICIPRM.2008.4703064, unter URL: 10.1109/ICIPRM.2008.4703064
Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Hopfer, F.; Karachinsky, L.Ya.; Kuntz, M.; Moser, P.; Mutig, A.; Strittmatter, A.; Kalosha, V.P.; Bimberg, D.
In: 2008, Bd. 6889, unter URL: https://dx.doi.org/10.1117/12.784371, unter URL: 10.1117/12.784371
Quantum-dot semiconductor disk-lasers
Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, S. 197-198, unter URL: https://dx.doi.org/10.1109/INOW.2008.4634508, unter URL: 10.1016/j.jcrysgro.2008.07.004
Characterisation of an InAs quantum dot semiconductor disk laser
Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.
In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84898606255&partnerID=40&md5=7294f58ef8514b615825c8111a78b0be
Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
Winkelnkemper, M.; Dworzak, M.; Battel, T.P.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2008, Bd. 245, S. 2766-2770, unter URL: https://dx.doi.org/10.1002/pssb.200844129, unter URL: 10.1002/pssb.200844129
Phonon interaction in InGaAs/GaAs quantum dots
Werner, S.; Zimmer, P.; Strittmatter, A.; Hoffmann, A.
In: 2008, Bd. 1053, S. 12-16, https://www.scopus.com/inward/record.uri?eid=2-s2.0-67649215426&partnerID=40&md5=ae07d1daa1a65b1dc22bd975d6c00c02
Begutachteter Zeitschriftenartikel
1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
Strittmatter, A.; Germann, T.D.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, Bd. 44, S. 290-291, unter URL: https://dx.doi.org/10.1049/el:20083131, unter URL: 10.1049/el:20083131
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